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Bebq2

Bebq2

  • 1g

$ 58.18

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Product Details

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Bebq2, a blue-fluorescence emitter with excellent charge transport ability

Best for use as an ETL material. Available online for priority dispatch


Bis(10-hydroxybenzo[h]quinolinato)beryllium, known as Bebq2, is the brother of in the Beryllium complex family. It is also a blue-fluorescence emitter with excellent charge transport ability.

When compared with as an electron-transport material, Bebq2 was proven to be superior, even though the ionisation potential and optical band gap of Bebq2 (5.5 eV and 2.7 eV respectively) and Alq3 (5.6 eV and 2.8 eV respectively) are almost the same. The best use for Bebq2 is not as an emitting-layer material or a host material (even though it is a widely used host material), but as an electron-transport material [1].

General Information


CAS number 148896-39-3
Chemical formula C26H16BeN2O2
Molecular weight 397.43 g/mol
Absorption* λmax 406 nm
Fluorescence λem 440 nm (DCM)
HOMO/LUMO HOMO = 5.5 eV, LUMO = 2.8 eV
Synonyms
  • Be(bq)2
  • Bepq2
  • Bis(10-hydroxybenzo[h]quinolinato)beryllium
  • Beryllium bisbenzo[h]quinolin-10-olate
Classification / Family Blue emitter, Electron-transport layer materials (ETL), Hole-blocking layer materials (HBL), Organic light-emitting diode (OLED), Organic electronics

* Measurable with an , see our .

Product Details


Purity >99% (sublimed)
Thermogravimetric Analysis (TGA) 434 °C (5% weight loss)
Differential Scanning Calorimetry (DSC) 364.9 °C
Colour Yellow powder/crystals

* Sublimation is a technique used to obtain ultra pure-grade chemicals, see .

Chemical Structure


Chemical Structure of Bis(10-hydroxybenzo[h]quinolinato)beryllium (Bebq2)

Device Structure(s)


Device structure ITO/DNTPD (40 nm)/Bebq2:Ir(piq)3 (50 nm, 4 wt%)/LiF (0.5 nm)/Al (100 nm) [2]
Colour Red
Max. Current Efficiency 9.38 cd/A
Max. Power Efficiency 11.72 lm W−1
Device structure ITO/NPB (40 nm)/Bebq2:1 wt% Ir(piq)3 (30 nm)/Bebq2 (20 nm)/LiF (0.5 nm)/Al (100 nm) [3]
Colour Red
Max. Current Efficiency 12.71 cd/A
Max. Power Efficiency 16.02 lm W−1
Device structure ITO/MeO-TPD: F4-TCNQ (50 nm, 4 wt%)/NPB (20 nm)/MADN:DSAph (25nm, 7 wt%)/Bebq2 (30 nm)/LiF (1 nm)/Al (200 nm) [4]
Colour Blue
Max. Luminance 70,645 cd/m2
Max. Current Efficiency 12.7 cd/A
Max. Power Efficiency 9.1 lm W−1
Device structure Ag (100 nm)/ITO (10 nm)/DNTPD (30 nm)/NPB (44 nm)/Bebq2:3 wt% Ir(mphmq)2(acac) (20 nm)/Bphen (31 nm)/Bphen: 5 wt% Li (10 nm)/HATCN (7 nm)/NPB (63 nm)/Bebq2: 3 wt% Ir(mphmq)2(acac) (20 nm)/Bphen (40 nm)/Liq (1 nm)/Mg:Ag (10:1; 18 nm)/NPB (60 nm) [5]
Colour Red
Max. EQE 26.5%
Max. Current Efficiency 95.8 cd/A
Device structure ITO/NPB (40 nm))/AND:3 wt% DPAVBi (45 nm)/Bebq2 (15 nm)/LiF (1.2 nm)/Al (100 nm) [6]
Colour Blue
EQE @ 100 cd/m2 8.32%
Current Efficiency @100 cd/m2 19.2 cd/A
Device structure ITO/PEDOT:PSS (30 nm)/α-NPD (40 nm)/Bebq2:TLEC-025* (1 wt%, 35 nm)/TPBI (40 nm)/LiF (1 nm)/Al (100 nm) [7]
Colour Red
EQE @ 100 cd/m2 17.1%
Power Efficiency @100 cd/m2 13.6 lm W−1
Device structure ITO/a-NPB:Bebq2:Ir(piq)3 (1 wt.%, 100 nm)/ LiF (0.5 nm)/Al (100 nm) [8]
Colour Red
Max. Current Efficiency 9.44 cd/A
Max. Purrent Efficiency 10.62 lm W−1

*For chemical structure information please refer to the cited references

Characterisation (TGA and DSC)


Thermogravimetric Analysis (TGA) and Differential Scanning Calorimetry (DSC) traces of Bis(10-hydroxybenzo[h]quinolinato)beryllium (Bebq2)

MSDS Documentation


Literature and Reviews


  1. Influence of the Emission Site on the Running Durability of Organic Electroluminescent Devices, Y. Hamada et al., Jpn. J. Appl. Phys., 34, L824 (1995);
  2. Efficiency Control in Iridium Complex-Based Phosphorescent Light-Emitting Diodes, B. Diouf et al., Adv. Mater. Sci.&Eng., 2012, 794674 (2012); doi:10.1155/2012/794674.
  3. Highly Efficient Simple-Structure Red Phosphorescent OLEDs with an Extremely Low Doping Technology, W. S. Jeon et al., J. Info. Display, 10 (2), 87-91 (2009).
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